Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL

  • R. M. Hassan Basrah University

Abstract

In this work, we study the characteristic temperature of a quantum dot laser (QDL) in
presence of internal optical loss and quantum efficiency. The control parameters (the constant
component of internal loss coefficient, effective cross section, carrier excitation energies from
a QD to the optical confinement layer (OCL), and the root mean square (RMS) of relative
QD-size fluctuations) are used for achieving free carrier density in the OCL and threshold
current density and its component.

Published
2019-05-13
How to Cite
Hassan, R. M. (2019). Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL . University of Thi-Qar Journal of Science, 3(1), 146-156. Retrieved from https://jsci.utq.edu.iq/index.php/main/article/view/219
Section
Articles