Carrier dynamic and carrier Temperature in Quantum Well
DOI:
https://doi.org/10.32792/utq/utjsci.v9i1.889Keywords:
semiconductor optical amplifier, quantum well, Carrier temperatureAbstract
Carrier temperature in quantum well (QW) semiconductor optical amplifier (SOA) has been studied,
depending density matrix theory (DMT) and carrier dynamic in quantum well. The effect of volume carrier density, doping
on effect, pulse shape, nonradiative relaxation, and nonlinear gain coefficients on the carrier temperature and carrier
heating has been investigated. The theoretical results show that; the time recovery increases straightforward with
nonradiative recombination, where the relaxation time of nonradiative recombination reduces the rate of carrier
occupation in quantum states. Also, the carrier temperature increases with carrier density, free carrier absorption, carrier
heating lifetime and reduces with pulse shape of pump pulses.
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