Four-Wave Mixing Conversion in QD SOA: reservoir effects

Authors

  • Ahmed H. Flayyih Department of physics/Science College/Thi-Qar University
  • Riyam H. Ali Department of physics/ Science College/Thi-Qar University

DOI:

https://doi.org/10.32792/utq/utjsci/v6i3.29

Keywords:

semiconductor optical amplifier, quantum dot structure, carrier heating and four-wave mixing

Abstract

In this paper, it is present a model to simulate Four-wave mixing in quantum dot semiconductor optical amplifier, taking into account the influence of carrier heating at reservoir. The numerical calculations show that; the carrier heating relaxation at reservoir demonstrates a significant impact on excited state occupation probability, and opposite occurs with ground state. Also, the conversion efficiency is shown a good match with experiment data.

Downloads

Published

2017-12-19

Issue

Section

Articles

How to Cite

Four-Wave Mixing Conversion in QD SOA: reservoir effects. (2017). University of Thi-Qar Journal of Science, 6(3), 30-34. https://doi.org/10.32792/utq/utjsci/v6i3.29