Four-Wave Mixing Conversion in QD SOA: reservoir effects

Authors

  • Ahmed H. Flayyih Department of physics/Science College/Thi-Qar University
  • Riyam H. Ali Department of physics/ Science College/Thi-Qar University

Keywords:

semiconductor optical amplifier, quantum dot structure, carrier heating and four-wave mixing

Abstract

In this paper, it is present a model to simulate Four-wave mixing in quantum dot semiconductor optical amplifier, taking into account the influence of carrier heating at reservoir. The numerical calculations show that; the carrier heating relaxation at reservoir demonstrates a significant impact on excited state occupation probability, and opposite occurs with ground state. Also, the conversion efficiency is shown a good match with experiment data.

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Published

2019-04-19

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Section

Articles

How to Cite

Four-Wave Mixing Conversion in QD SOA: reservoir effects. (2019). University of Thi-Qar Journal of Science, 6(3), 30-34. https://jsci.utq.edu.iq/index.php/main/article/view/29