Cross gain modulation in quantum dot semiconductor optical amplifiers under the influence of the Probe

Authors

  • Ahmed Flayyih University of Thi-Qar
  • Seyedeh Hamideh Kazemi Department of Physics/ University of Zanjan
  • Amin Al-Khursan University of Thi-Qar

DOI:

https://doi.org/10.32792/utq/utjsci/v10i2.1132

Keywords:

quantum dot, semiconductor optical amplifier, cross gain modulation XGM

Abstract

The Pulse effect on the  cross-gain modulation (XGM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is investigated using the combining of the SOA power with the QD rate equations system. The QDs structure  includes  three regions: ground state (GS), excited state (ES) and wetting layer (WL). Thus, a set of rate equations for pump and probe signals is introduced for both steady-state and small-signal power values, which are solved numerically. The pulse shape was included in the analysis, for pump and probe signals.  The theoretical results showed a good agreement with the experimental results. It was found that decreasing pulse width of pump/probe ratio is efficient to increase XGM efficiency and bandwidth.

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Article Dates

Published: 2023-12-26

How to Cite

Flayyih, A., Seyedeh Hamideh Kazemi, & Al-Khursan, A. (2023). Cross gain modulation in quantum dot semiconductor optical amplifiers under the influence of the Probe. University of Thi-Qar Journal of Science, 10(2), 171–176. https://doi.org/10.32792/utq/utjsci/v10i2.1132

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